Ion implantation effects on the microstructure, electrical resistivity and thermal conductivity of amorphous CrSi2 thin films

The microstructural changes induced by ion implantation may lead to advantageous modifications of chromium disilicide's (CrSi2) electrical and thermal properties. As a potential thermoelectric material, CrSi2 has attracted attention due its semiconductor properties high stability. This contribution investigates the influence different species conditions on microstructure, resistivity ρ conductivity κ behaviors in amorphous thin films. ~ 260-nm-thick films were produced magnetron sputtering deposited onto SiO2/Si substrate. Samples implanted at room temperature either with Ne or Al ions form concentration–depth plateau reaching concentration ≈ 1.0 at.% (Ne), 0.008 (Al). implantations also performed targets heated 250 °C. characterized via TEM STEM-EDX. was measured van der Pauw method, measurements obtained SThM. results show that cause reduction as compared pristine film. In contrast, values are significantly higher for substrates. microstructure evolution, discussed considering effects radiation damage formation dense nanocrystallite arrays during process.